In Pudong, Baoshan, Jinshan and other districts, the capacity for commercializing industrial achievements will be elevated to create future material industry clusters.

High-end membrane materials. The capabilities for independent basic structure design and raw material development of membrane materials will be enhanced, breakthroughs will be achieved in such technologies as high-end membrane separation, full cell proton exchange membrane and special resin, hollow fiber membrane used for vitro membrane lung oxygenator, liquid crystal polymer film for 5G/6G antenna, high thermal conductivity graphene film, and other raw material and film technologies. The technology upgrade and industrial application of membrane materials for high-end lithium batteries, optical films for new displays, release films for integrated circuits, etc. will continue to move ahead.

High-performance composite materials. The high-performance fiber industry chain will be strengthened while research on extreme-environment fiber, biomedical fiber, artificial intelligence fiber, etc. will be launched. Also, research and development of polyacrylonitrile-based carbon fiber will be improved, and the preparatory technology and processes for viscose based carbon fiber, asphalt-based carbon fiber, aramid fiber, ultra-high molecular weight polyolefin fiber, etc. will be supported and upgraded. New breakthroughs in the core catalytic materials and the mass production technology of high performance carbon fiber and composite materials will be achieved. The energy conversion and storage fibers, color-changing fibers, shape memory fibers and actuating fibers and other application technologies will be developed. Continuous breakthroughs in high-temperature alloys for aero-engines, metal-based composites and high-end medical degradable alloys will be achieved.

Non-silicon based materials. Silicon carbide, gallium nitride and other wide-bandgap semiconductor compounds will be further developed, the capacity and production scale of the crystal fabrication technology for wide-bandgap semiconductor compounds will be improved continuously. New efforts will be made to develop the wafer manufacturing process of wide-bandgap semiconductors, and the capability for the design and application of the wide-bandgap semiconductor chip products will be expanded. In addition, the technological research and preparatory work on graphene, carbon nanotubes and other carbon-based chip materials as well as two-dimensional semiconductor materials and other future non-silicon based semiconductor materials will be vigorously promoted.